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| New Product SIE848DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 RDS(on) ()e 0.0016 at VGS = 10 V 0.0022 at VGS = 4.5 V Silicon Limit 211 180 Package Limit 60 43 nC 60 Qg FEATURES * TrenchFET(R) Gen III Power MOSFET * Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK(R) Package for COMPLIANT Double-Sided Cooling * Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size * Low Qgd/Qgs Ratio Helps Prevent Shoot-Through * 100 % Rg and UIS Tested Package Drawing http://www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS * VRM * DC/DC Conversion: Low-Side * Synchronous Rectification D D D S G D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 Bottom View S N-Channel MOSFET For Related Documents http://www.vishay.com/ppg?68821 Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SIE848DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH ID Symbol VDS VGS Limit 30 20 211 (Silicon Limit) 60a (Package Limit) 60a 43b, c 34b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 50 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 C TC = 70 C PD W Maximum Power Dissipation TA = 25 C TA = 70 C TJ, Tstg Operating Junction and Storage Temperature Range C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68821 S-82581-Rev. A, 27-Oct-08 www.vishay.com 1 New Product SIE848DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Symbol VDS VDS /TJ VGS(th) /TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 15 V, ID = 25 A Min. 30 Typ. Max. Unit V 1.0 30 - 6.0 1.8 mV/C 2.5 100 1 10 0.0016 0.0022 V nA A A 25 0.0013 0.0018 115 6100 1100 370 92 43 17 11 1.1 45 30 70 40 20 10 50 10 Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge S VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 pF 138 65 IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current nC VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 2.2 70 45 105 60 30 15 75 15 60 100 1.2 60 75 ns TC = 25 C IS = 10 A IF = 10 A, dI/dt = 100 A/s, TJ = 25 C 0.8 40 50 21 19 A V ns nC ns Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68821 S-82581-Rev. A, 27-Oct-08 New Product SIE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 100 VGS = 10 thru 4 V 80 I D - Drain Current (A) I D - Drain Current (A) VGS = 3 V 60 15 25 C, unless otherwise noted 20 TC = - 55 C 10 TC = 25 C 40 5 20 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 125 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0022 VGS = 4.5 V 0.0020 R DS(on) - On-Resistance () C - Capacitance (pF) 8000 7000 Transfer Characteristics Ciss 6000 0.0018 5000 4000 3000 2000 Coss 0.0016 VGS = 10 V 0.0014 0.0012 1000 0 0 20 40 60 80 100 0 Crss 5 10 15 20 25 30 0.0010 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.6 1.8 ID = 25 A Capacitance 1.4 (Normalized) VGS = 10 V 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 20 40 60 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68821 S-82581-Rev. A, 27-Oct-08 www.vishay.com 3 New Product SIE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.006 R DS(on) - On-Resistance () 0.005 I S - Source Current (A) 0.004 10 TJ = 150 C 0.003 TJ = 125 C 0.002 TJ = 25 C 1 0.0 0.001 0.2 0.4 0.6 0.8 1.0 0 2 4 6 VSD - Source-to-Drain Voltage (V) TJ = 25 C 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.2 2.0 40 50 On-Resistance vs. Gate-to-Source Voltage 1.8 ID = 250 A VGS(th) (V) 1.6 1.4 1.2 1.0 0.8 - 50 10 Power (W) 30 20 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68821 S-82581-Rev. A, 27-Oct-08 New Product SIE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 250 140 120 200 I D - Drain Current (A) Power Dissipation (W) 100 80 60 40 20 150 100 Package Limited 50 0 0 25 50 75 100 125 150 TC - Case Temperature (C) 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68821 S-82581-Rev. A, 27-Oct-08 www.vishay.com 5 New Product SIE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68821. www.vishay.com 6 Document Number: 68821 S-82581-Rev. A, 27-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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